SCHEMBL705200

SCHEMBL705200

c1ccc(OC(C[SiH2]C[SiH2]CC(Oc2ccccc2)Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
SLC6A4 P31645 1/20 0.34
MTNR1A P48039 1/20 0.33
MTNR1B P49286 1/20 0.33
PPARG P37231 3/20 0.33
PPARA Q07869 3/20 0.33
LMNA P02545 2/20 0.32
CA4 P22748 1/20 0.32
SCN4A P35499 2/20 0.31
ALDH1A1 P00352 3/20 0.31
TAAR1 Q96RJ0 1/20 0.31
RECQL P46063 1/20 0.31
MAPK1 P28482 1/20 0.31
MEN1 O00255 1/20 0.31
TP53 P04637 1/20 0.31
GAA P10253 1/20 0.31
KMT2A Q03164 1/20 0.31
KDM4E B2RXH2 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702065 0.87 SLC6A4 (0.38) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL705626 0.83 KCNA3 (0.37) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL706554 0.83 KCNA3 (0.37) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL704154 0.79 SLC6A4 (0.36) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL703809 0.77 SLC6A4 (0.37) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL705985 0.72 SLC6A4 (0.37) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL7305170 0.70 TAAR1 (0.44) LTA4HTSHRKCNA3SLC6A4SCN4A
SCHEMBL8672749 0.70 HDAC3 (0.40) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL2186074 0.70 CA4 (0.42) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL16167284 0.70 LTA4H (0.39) LTA4HTSHRKCNA3SLC6A4MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed