SCHEMBL706554

SCHEMBL706554

c1ccc(OC(C[SiH2]CCC[SiH2]CC(Oc2ccccc2)Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.37
SLC6A4 P31645 1/20 0.36
MTNR1A P48039 1/20 0.35
MTNR1B P49286 1/20 0.35
CA4 P22748 1/20 0.34
LMNA P02545 1/20 0.34
LTA4H P09960 3/20 0.33
HTR1B P28222 1/20 0.33
TAAR1 Q96RJ0 1/20 0.33
KCNH2 Q12809 1/20 0.33
GAA P10253 1/20 0.33
KDM4E B2RXH2 1/20 0.33
TSHR P16473 1/20 0.32
SLC7A5 Q01650 1/20 0.32
MAOA P21397 1/20 0.32
PTGS1 P23219 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705626 0.96 KCNA3 (0.37) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL702065 0.92 SLC6A4 (0.38) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL705200 0.83 LTA4H (0.35) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL702539 0.82 KCNA3 (0.35) KCNA3SLC6A4LMNATAAR1KCNH2
SCHEMBL705261 0.78 KCNA3 (0.35) KCNA3SLC6A4LMNATAAR1KCNH2
SCHEMBL703809 0.73 SLC6A4 (0.37) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL705985 0.73 SLC6A4 (0.37) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL6463009 0.72 SLC6A4 (0.43) SLC6A4MTNR1AMTNR1BCA4LMNA
SCHEMBL704154 0.72 SLC6A4 (0.36) KCNA3SLC6A4MTNR1AMTNR1BCA4
SCHEMBL2186074 0.72 CA4 (0.42) KCNA3SLC6A4MTNR1AMTNR1BCA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed