SCHEMBL702065

SCHEMBL702065

c1ccc(OC(C[SiH2]CC[SiH2]CC(Oc2ccccc2)Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 1/20 0.38
CA4 P22748 1/20 0.37
MTNR1A P48039 1/20 0.37
MTNR1B P49286 1/20 0.37
LMNA P02545 1/20 0.36
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
KDM4E B2RXH2 1/20 0.34
MAOA P21397 2/20 0.33
PTGS1 P23219 1/20 0.33
CHRNB4 P30926 2/20 0.33
CHRNA3 P32297 2/20 0.33
PPARG P37231 2/20 0.33
PPARA Q07869 2/20 0.33
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
MAOB P27338 1/20 0.33
NISCH Q9Y2I1 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706554 0.92 KCNA3 (0.37) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL705626 0.92 KCNA3 (0.37) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL705200 0.87 LTA4H (0.35) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL705985 0.81 SLC6A4 (0.37) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL703809 0.77 SLC6A4 (0.37) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL6463009 0.76 SLC6A4 (0.43) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL704154 0.75 SLC6A4 (0.36) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL2186074 0.75 CA4 (0.42) SLC6A4CA4MTNR1AMTNR1BLMNA
SCHEMBL705261 0.74 KCNA3 (0.35) SLC6A4LMNAKCNA3PPARGPPARA
SCHEMBL702539 0.74 KCNA3 (0.35) SLC6A4LMNAKCNA3PPARGPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed