SCHEMBL705216

SCHEMBL705216

CCC(CC)C(=O)O[SiH2]c1ccc([SiH2]OC(=O)C(CC)CC)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 1/20 0.36
ALDH1A1 P00352 3/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
KMT2A Q03164 4/20 0.33
MEN1 O00255 3/20 0.33
TSHR P16473 3/20 0.33
NPC1 O15118 1/20 0.33
MAPT P10636 1/20 0.32
LMNA P02545 1/20 0.31
NPSR1 Q6W5P4 2/20 0.31
HTT P42858 1/20 0.31
GAA P10253 2/20 0.31
XBP1 P17861 1/20 0.31
ATM Q13315 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
KDM4E B2RXH2 1/20 0.30
USP2 O75604 1/20 0.30
CA7 P43166 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705845 0.85 CA1 (0.42) SMN1; SMN2CA1CA2TSHRNPSR1
SCHEMBL706769 0.77 ELANE (0.39) ALDH1A1TSHRNPC1MAPT
SCHEMBL705707 0.73
SCHEMBL707082 0.70 CA2 (0.38) ALDH1A1CA1CA2TSHRNPSR1
SCHEMBL706666 0.70 CA2 (0.38) ALDH1A1CA1CA2TSHRUSP2
SCHEMBL1053847 0.68 ELANE (0.43) RAB9AALDH1A1SMN1; SMN2KMT2AMEN1
SCHEMBL21522357 0.67 ELANE (0.51) RAB9AALDH1A1SMN1; SMN2KMT2AMEN1
SCHEMBL706825 0.67 CA2 (0.39) ALDH1A1CA1CA2TSHRUSP2
SCHEMBL705770 0.67 CA2 (0.39) ALDH1A1CA1CA2TSHRUSP2
SCHEMBL27321833 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed