SCHEMBL706769

SCHEMBL706769

CC(C)C(=O)O[SiH2]c1ccc([SiH2]OC(=O)C(C)C)cc1

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ELANE P08246 2/20 0.39
MIF P14174 1/20 0.35
ALOX15 P16050 1/20 0.33
ALDH1A1 P00352 2/20 0.31
TSHR P16473 1/20 0.31
POLB P06746 1/20 0.30
MAPT P10636 1/20 0.30
ADRB2 P07550 1/20 0.30
ADRA2A P08913 1/20 0.30
DRD2 P14416 1/20 0.30
ADRA2C P18825 1/20 0.30
DRD1 P21728 1/20 0.30
ADRA1A P35348 1/20 0.30
DRD3 P35462 1/20 0.30
NPC1 O15118 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1053847 0.90 ELANE (0.43) ELANEALDH1A1TSHRMAPTNPC1
SCHEMBL21522357 0.87 ELANE (0.51) ELANEALDH1A1TSHRPOLBMAPT
SCHEMBL7858660 0.86 TAS1R3 (0.40) ELANEMIFALDH1A1
SCHEMBL705707 0.83
SCHEMBL705216 0.77 RAB9A (0.36) ALDH1A1TSHRMAPTNPC1
SCHEMBL704477 0.71 L3MBTL1 (0.50) ALDH1A1POLB
SCHEMBL4643335 0.70 ALDH1A1 (0.38) ALDH1A1MAPT
SCHEMBL1052192 0.70
SCHEMBL7864087 0.68 ELANE (0.33) ELANEMIFALDH1A1TSHRMAPT
SCHEMBL1498104 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed