Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GRIN1 | Q05586 | 6/20 | 0.39 |
| ▸ | GRIN2A | Q12879 | 6/20 | 0.39 |
| ▸ | GRIN2D | O15399 | 5/20 | 0.39 |
| ▸ | GRIN2C | Q14957 | 5/20 | 0.39 |
| ▸ | GRIN2B | Q13224 | 4/20 | 0.39 |
| ▸ | KCNH2 | Q12809 | 2/20 | 0.36 |
| ▸ | KCNN4 | O15554 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.32 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | OPRM1 | P35372 | 2/20 | 0.32 |
| ▸ | KIF11 | P52732 | 1/20 | 0.32 |
| ▸ | CACNA1F | O60840 | 1/20 | 0.32 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.32 |
| ▸ | CYP2B6 | P20813 | 1/20 | 0.32 |
| ▸ | DRD4 | P21917 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL702333 | 0.79 | KCNH2 (0.44) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL6284917 | 0.77 | GRIN1 (0.44) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL702749 | 0.77 | KCNH2 (0.37) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL109172 | 0.74 | MAPK1 (0.43) | KCNN4MAPK1ALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL708760 | 0.74 | MAPK1 (0.43) | KCNN4MAPK1ALDH1A1CYP2D6CYP2C19 | |
| SCHEMBL12809670 | 0.74 | GRIN1 (0.42) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL4454908 | 0.71 | GRIN1 (0.43) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL416118 | 0.71 | GRIN1 (0.47) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL1317834 | 0.71 | GRIN1 (0.37) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B | |
| SCHEMBL1314752 | 0.70 | GRIN1 (0.41) | GRIN1GRIN2AGRIN2DGRIN2CGRIN2B |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-5439746-A | Formed by coating or impregnating a reinforcement sheet and curing; mechanical strength; corrosion and heat resistance; electrical properties | KABUSHIKI KAISHA TOSHIBA (JP) | 1995-08-08 | — | — | US | disclosed |