SCHEMBL1317834

SCHEMBL1317834

CC(C)C(CO[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
GRIN1 Q05586 4/20 0.37
GRIN2A Q12879 4/20 0.37
GRIN2D O15399 3/20 0.37
GRIN2C Q14957 3/20 0.37
GRIN2B Q13224 2/20 0.37
CYP2D6 P10635 3/20 0.36
CYP1A2 P05177 1/20 0.36
KCNN4 O15554 2/20 0.35
MAPK1 P28482 1/20 0.35
CYP2C19 P33261 3/20 0.34
HIF1A Q16665 1/20 0.34
ALDH1A1 P00352 2/20 0.34
HSD17B10 Q99714 1/20 0.34
KCNH2 Q12809 1/20 0.34
TAAR1 Q96RJ0 1/20 0.33
ALOX15 P16050 1/20 0.33
RIPK1 Q13546 1/20 0.33
CYP3A4 P08684 1/20 0.33
KIF11 P52732 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1314752 0.83 GRIN1 (0.41) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B
SCHEMBL704126 0.80 CYP2D6 (0.36) CYP2D6CYP1A2KCNN4MAPK1CYP2C19
SCHEMBL6284917 0.74 GRIN1 (0.44) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B
SCHEMBL705543 0.72 MAPK1 (0.44) CYP2D6KCNN4MAPK1CYP2C19HIF1A
SCHEMBL109031 0.72 TAAR1 (0.52) KCNN4MAPK1CYP2C19HIF1AALDH1A1
SCHEMBL11988595 0.72 RIPK1 (0.41) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B
SCHEMBL1314544 0.72 KIF11 (0.37) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B
SCHEMBL238217 0.72 KIF11 (0.41) CYP1A2KCNN4MAPK1CYP2C19ALDH1A1
SCHEMBL15563080 0.71 GRIN1 (0.42) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B
SCHEMBL705236 0.71 GRIN1 (0.39) GRIN1GRIN2AGRIN2DGRIN2CGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-8163950-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-24 US disclosed
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2011-11-10 US disclosed
US-8008521-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes HOKKO CHEMICAL INDUSTRY CO., LTD. (JP) 2011-08-30 US disclosed
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2009-03-26 US disclosed
US-7459577-B2 Reacting a chlorosilane with grignard reagent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-31 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X GRIN1 440/4885GRIN2A 748/4885GRIN2D 1710/4885
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X GRIN1 440/4885GRIN2A 748/4885GRIN2D 1710/4885
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes MLX, HAX1, GRIA3 GRIN1 295/4885GRIN2A 450/4885GRIN2D 1400/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.