Butane

Butane

SCHEMBL2501351

CCCC.c1ccc(O[SiH2]Oc2ccccc2)cc1

nearest known ligand 0.43

Full drug profile on Sugi Atlas →

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.43
CA4 P22748 1/20 0.42
LMNA P02545 1/20 0.40
TSHR P16473 1/20 0.39
KCNA3 P22001 1/20 0.39
CHRNB2 P17787 2/20 0.38
CHRNB4 P30926 2/20 0.38
CHRNA3 P32297 2/20 0.38
CHRNA7 P36544 2/20 0.38
CHRNA4 P43681 2/20 0.38
L3MBTL1 Q9Y468 1/20 0.36
TP53 P04637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707758 0.87 LTA4H (0.50) LTA4HCA4LMNATSHRKCNA3
Hydrochloric Acid SCHEMBL9709369 0.84 LTA4H (0.47) LTA4HCA4LMNATSHRKCNA3
SCHEMBL2115179 0.81 LTA4H (0.43) LTA4HCA4LMNATSHRKCNA3
Naphthalene SCHEMBL28994860 0.79 CYP2A6 (0.44) LTA4HCA4TSHRKCNA3
Biphenyl SCHEMBL2499426 0.79 ALDH1A1 (0.50) LTA4HCA4TSHRKCNA3
SCHEMBL2115587 0.77 CA4 (0.50) LTA4HCA4LMNATSHRKCNA3
SCHEMBL705351 0.76 LTA4H (0.41) LTA4HCA4LMNATSHRKCNA3
Diphenylether SCHEMBL23093711 0.76 LTA4H (0.71) LTA4HCA4LMNATSHR
SCHEMBL9715684 0.76 LTA4H (0.45) LTA4HCA4LMNATSHRKCNA3
SCHEMBL707316 0.75 CA4 (0.42) LTA4HCA4LMNATSHRKCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250382394-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC GLOBAL TECHNOLOGIES BV (NL) 2025-12-18 US disclosed
EP-4551620-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC Global Technologies B.V. (NL) 2025-05-14 EP disclosed
US-20250101152-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC GLOBAL TECHNOLOGIES BV (NL) 2025-03-27 US disclosed
EP-4444769-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC Global Technologies B.V. (NL) 2024-10-16 EP disclosed
WO-2024080172-A1 MODIFIED GROUP-CONTAINING HYDROGENATED BLOCK COPOLYMER AND METHOD FOR PRODUCING MODIFIED GROUP-CONTAINING HYDROGENATED BLOCK COPOLYMER 日本ゼオン株式会社 2024-04-18 WO disclosed
WO-2024008770-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC GLOBAL TECHNOLOGIES B.V. (NL) 2024-01-11 WO disclosed
WO-2023104940-A1 CATALYST SYSTEM FOR POLYMERIZATION OF AN OLEFIN SABIC GLOBAL TECHNOLOGIES B.V. (NL) 2023-06-15 WO disclosed
US-20230167244-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2023-06-01 US disclosed
EP-4119596-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2023-01-18 EP disclosed
EP-3083822-B1 HETEROPHASIC PROPYLENE COPOLYMER SAUDI BASIC IND CORP (SA) 2021-09-08 EP disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-6749944-B2 VAPOR DEPOSITION, OSCILLATION, HEATING USING ORGANOSILICON COMPOUND; FORMING DIELECTRIC JSR CORPORATION (JP) 2004-06-15 US disclosed
US-20040013972-A1 Radiation-sensitive composition changing in refractive index and method of changing refractive index JSR CORPORATION (JP) 2004-01-22 US disclosed
EP-1350814-A1 RADIATION-SENSITIVE COMPOSITION CHANGING IN REFRACTIVE INDEX AND METHOD OF CHANGING REFRACTIVE INDEX JSR Corporation (JP) 2003-10-08 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20030059628-A1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1295924-A2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed