SCHEMBL705653

SCHEMBL705653

CCCCC(CCCC)[SiH2]Br

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.39
ALDH1A1 P00352 3/20 0.35
TDP1 Q9NUW8 1/20 0.35
TSHR P16473 4/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
CYP3A4 P08684 1/20 0.33
LMNA P02545 1/20 0.33
FDPS P14324 1/20 0.33
CA2 P00918 3/20 0.32
MAPK1 P28482 1/20 0.32
OPRM1 P35372 1/20 0.32
THRB P10828 1/20 0.32
CA1 P00915 1/20 0.31
LCK P06239 1/20 0.30
PPARD Q03181 1/20 0.30
ZDHHC20 Q5W0Z9 1/20 0.30
ZDHHC2 Q9UIJ5 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6905888 0.89
SCHEMBL68330 0.71 DNM1 (0.39) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL8384894 0.71 DNM1 (0.39) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL8517997 0.71 DNM1 (0.39) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL3189990 0.71 DNM1 (0.39) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL708795 0.71 DNM1 (0.39) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL3482205 0.71 ALDH1A1 (0.40) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL11852752 0.67
SCHEMBL3481430 0.67
SCHEMBL7948887 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed