SCHEMBL708795

SCHEMBL708795

CCCCC(CCCC)[SiH2]Cl

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.39
ALDH1A1 P00352 4/20 0.35
TDP1 Q9NUW8 2/20 0.35
TSHR P16473 6/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
CYP3A4 P08684 1/20 0.33
LMNA P02545 1/20 0.33
FDPS P14324 1/20 0.33
CA2 P00918 3/20 0.32
MAPK1 P28482 1/20 0.32
OPRM1 P35372 1/20 0.32
THRB P10828 1/20 0.32
CA1 P00915 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11399407 0.95 DNM1 (0.36) DNM1ALDH1A1TDP1TSHRSMN1; SMN2
SCHEMBL11395225 0.95 DNM1 (0.42) DNM1ALDH1A1TSHRLMNAFDPS
SCHEMBL11397907 0.92 DNM1 (0.46) DNM1ALDH1A1TSHRLMNAFDPS
SCHEMBL3482064 0.89
SCHEMBL132565 0.89 LMNA (0.42) DNM1ALDH1A1TSHRLMNAFDPS
SCHEMBL11396945 0.85 LMNA (0.39) DNM1ALDH1A1TSHRLMNAFDPS
SCHEMBL3482389 0.81
SCHEMBL3481725 0.81 OPRM1 (0.39) DNM1ALDH1A1TSHRLMNAFDPS
SCHEMBL8908346 0.78 TSHR (0.40) ALDH1A1TDP1TSHR
SCHEMBL3481925 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118561901-A Compound containing bis ((siloxy) phenyl) methane structure and preparation method and application thereof 南京工业大学 2024-08-30 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
EP-1999167-A2 ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR Novolen Technology Holdings, C.V. (NL) 2008-12-10 EP disclosed
WO-2007106348-A2 ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) 2007-09-20 WO disclosed
US-20070213204-A1 Ziegler-Natta catalyst with in situ-generated donor NOVOLEN TECHNOLOGY HOLDINGS C.V. 2007-09-13 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed
US-20060222869-A1 Electropen lithography ENERGY, UNITED STATES DEPARTMENT 2006-10-05 US disclosed
US-5686021-A Liquid crystal display device, methods of producing and driving the liquid crystal display device, and liquid crystal composition IDEMITSU KOSAN CO., LTD. (JP) 1997-11-11 US disclosed
EP-0429547-A1 A METHOD OF COATING SILICON CARBIDE FIBERS AlliedSignal Inc. (US) 1991-06-05 EP disclosed
US-4923719-A ORGANOFLUOROSILANE ALLIED-SIGNAL INC. (US) 1990-05-08 US disclosed
WO-1990002107-A1 A METHOD OF COATING SILICON CARBIDE FIBERS ALLIED-SIGNAL INC. (US) 1990-03-08 WO disclosed