SCHEMBL705686

SCHEMBL705686

C[Si](C)(Oc1ccccc1)c1ccc([Si](C)(C)Oc2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
LTA4H P09960 4/20 0.39
TSHR P16473 1/20 0.39
ESR1 P03372 1/20 0.38
ESR2 Q92731 1/20 0.38
NR1I2 O75469 2/20 0.34
KCNA3 P22001 1/20 0.33
CA5A P35218 1/20 0.32
CA5B Q9Y2D0 1/20 0.32
NR1H2 P55055 2/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
NR1H3 Q13133 1/20 0.31
KCNH2 Q12809 1/20 0.31
LMNA P02545 1/20 0.31
KDM4E B2RXH2 1/20 0.31
GLA P06280 1/20 0.31
MAPT P10636 1/20 0.31
KMT2A Q03164 1/20 0.31
HTR1D P28221 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708546 0.95 CA4 (0.42) CA4LTA4HTSHRESR1ESR2
SCHEMBL18417882 0.82 LMNA (0.40) TSHRNPC1RAB9ALMNAMAPT
SCHEMBL18421512 0.82 CA4 (0.52) CA4LTA4HNPC1RAB9ALMNA
SCHEMBL198947 0.81 TDP1 (0.39) TSHRNPC1RAB9AGLAMAPT
SCHEMBL28440907 0.81 MAOA (0.48) TSHRNPC1RAB9ALMNAKDM4E
SCHEMBL705002 0.80 CA4 (0.42) CA4LTA4HTSHRESR1ESR2
SCHEMBL9331294 0.77 CA4 (0.43) CA4LTA4HTSHRESR1ESR2
SCHEMBL7134965 0.76 ALDH1A1 (0.45) TSHRKDM4EMAPTKMT2A
SCHEMBL9678425 0.76 CA4 (0.48) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL977231 0.76 CA4 (0.55) CA4LTA4HTSHRKCNA3CA5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed