SCHEMBL705691

SCHEMBL705691

CC(C)[Si](C[Si](Oc1ccccc1)(Oc1ccccc1)C(C)C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.41
MAOA P21397 2/20 0.37
PTGS1 P23219 1/20 0.37
CA4 P22748 1/20 0.37
SIGMAR1 Q99720 2/20 0.36
TAAR1 Q96RJ0 3/20 0.35
SLC6A2 P23975 2/20 0.35
SLC6A4 P31645 1/20 0.35
SLC6A3 Q01959 1/20 0.35
CYP2A6 P11509 1/20 0.35
ADORA2A P29274 1/20 0.35
ADORA1 P30542 1/20 0.35
POLB P06746 2/20 0.35
TSHR P16473 2/20 0.35
LTA4H P09960 1/20 0.35
KCNA3 P22001 1/20 0.34
KDM4E B2RXH2 1/20 0.34
MTNR1A P48039 1/20 0.33
MTNR1B P49286 1/20 0.33
ADRB2 P07550 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703579 0.87 LMNA (0.41) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL19816978 0.85 LMNA (0.39) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL703601 0.83 LMNA (0.38) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL702568 0.83 LMNA (0.38) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL19816499 0.83 LTA4H (0.36) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL19816718 0.80 CA4 (0.37) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL702424 0.78 LMNA (0.41) LMNAMAOAPTGS1CA4POLB
SCHEMBL425476 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4POLB
SCHEMBL706142 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4POLB
SCHEMBL432208 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed