SCHEMBL703601

SCHEMBL703601

CC(C)[Si](CCCC[Si](Oc1ccccc1)(Oc1ccccc1)C(C)C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.38
KCNA3 P22001 1/20 0.37
MAOA P21397 2/20 0.35
PTGS1 P23219 1/20 0.35
MTNR1A P48039 1/20 0.35
MTNR1B P49286 1/20 0.35
CA4 P22748 1/20 0.34
KCNH2 Q12809 1/20 0.34
SIGMAR1 Q99720 2/20 0.34
SLC6A2 P23975 2/20 0.33
TAAR1 Q96RJ0 2/20 0.33
HTR1B P28222 1/20 0.33
SLC6A4 P31645 1/20 0.33
SLC6A3 Q01959 1/20 0.33
POLB P06746 1/20 0.33
HPGD P15428 1/20 0.33
CYP2A6 P11509 1/20 0.33
ADORA2A P29274 1/20 0.33
ADORA1 P30542 1/20 0.33
LTA4H P09960 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702568 0.96 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL703579 0.92 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL705691 0.83 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL19816978 0.82 LMNA (0.39) LMNAKCNA3MAOAPTGS1CA4
SCHEMBL707368 0.80 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL19816718 0.77 CA4 (0.37) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL706450 0.76 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL19816499 0.76 LTA4H (0.36) LMNAMAOAPTGS1CA4SIGMAR1
SCHEMBL702646 0.75 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL705384 0.72 KCNA3 (0.41) LMNAKCNA3CA4KCNH2HTR1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed