SCHEMBL705807

SCHEMBL705807

CC(=O)O[SiH](c1ccccc1)C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.37
TDP1 Q9NUW8 3/20 0.35
TSHR P16473 3/20 0.35
HSD17B10 Q99714 2/20 0.35
NAPRT Q6XQN6 2/20 0.35
ELANE P08246 1/20 0.35
KDM4E B2RXH2 1/20 0.35
ESR1 P03372 1/20 0.35
ITGB3 P05106 1/20 0.35
ITGA2B P08514 1/20 0.35
HMGB1 P09429 1/20 0.35
HPGD P15428 1/20 0.35
GGT1 P19440 1/20 0.35
PTGS1 P23219 1/20 0.35
PTGS2 P35354 1/20 0.35
BLM P54132 1/20 0.35
MAPT P10636 2/20 0.34
AKR1C3 P42330 1/20 0.34
GLA P06280 1/20 0.34
KMT2A Q03164 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5838708 0.82 ELANE (0.41) ALDH1A1TDP1TSHRHSD17B10ELANE
SCHEMBL5837882 0.79 THRB (0.38) ALDH1A1TDP1TSHRHSD17B10MAPT
SCHEMBL2711943 0.77 ALDH1A1 (0.43) ALDH1A1TDP1TSHRHSD17B10NAPRT
SCHEMBL204167 0.75 ALDH1A1 (0.42) ALDH1A1TDP1TSHRHSD17B10NAPRT
SCHEMBL10516808 0.74 MAPK1 (0.37) ALDH1A1
SCHEMBL707853 0.74 ALDH1A1 (0.41) ALDH1A1TDP1TSHRHSD17B10NAPRT
SCHEMBL705887 0.73 MAPK1 (0.36) ALDH1A1KCNN4
SCHEMBL704633 0.71 MAPK1 (0.34) ALDH1A1TDP1TSHRHSD17B10
SCHEMBL706107 0.69 CA4 (0.37) ALDH1A1TSHR
SCHEMBL704565 0.69 ALDH1A1 (0.41) ALDH1A1TDP1TSHRHSD17B10NAPRT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed