SCHEMBL705847

SCHEMBL705847

Cl[Si](Cl)(c1ccccc1)c1ccc([Si](Cl)(Cl)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
TSHR P16473 6/20 0.37
ALDH1A1 P00352 4/20 0.35
TDP1 Q9NUW8 4/20 0.35
HSD17B10 Q99714 1/20 0.35
NR1H2 P55055 2/20 0.32
NR1H3 Q13133 2/20 0.32
MAOA P21397 1/20 0.32
MAOB P27338 1/20 0.32
BBOX1 O75936 1/20 0.32
EHMT2 Q96KQ7 1/20 0.32
EHMT1 Q9H9B1 1/20 0.32
NPC1 O15118 1/20 0.32
MAPK1 P28482 1/20 0.32
RAB9A P51151 1/20 0.32
LMNA P02545 2/20 0.32
ORAI1 Q96D31 1/20 0.30
ORAI2 Q96SN7 1/20 0.30
ORAI3 Q9BRQ5 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL76000 0.97 TSHR (0.39) ESR1ESR2TSHRALDH1A1TDP1
SCHEMBL29120692 0.97 TSHR (0.39) ESR1ESR2TSHRALDH1A1TDP1
Fluoride SCHEMBL5604818 0.93 TSHR (0.37) ESR1ESR2TSHRALDH1A1TDP1
SCHEMBL23000908 0.89 CYP1A2 (0.48) ESR2ALDH1A1TDP1HSD17B10NPC1
SCHEMBL20829729 0.89 TSHR (0.50) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL9586411 0.88 TSHR (0.33) ESR1ESR2TSHRALDH1A1TDP1
SCHEMBL28518241 0.88 TSHR (0.33) ESR1ESR2TSHRALDH1A1TDP1
SCHEMBL3482589 0.87 ACHE (0.48) ESR1ESR2TSHRALDH1A1TDP1
SCHEMBL8649952 0.85 ALDH1A1 (0.50) ESR2ALDH1A1TDP1HSD17B10NPC1
SCHEMBL6046614 0.83 ALDH1A1 (0.30) ESR1ESR2TSHRALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed