SCHEMBL706207

SCHEMBL706207

CC[SiH](OC(C)(C)C)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.32
MEN1 O00255 1/20 0.32
GAA P10253 1/20 0.32
PKM P14618 1/20 0.32
TSHR P16473 1/20 0.32
KMT2A Q03164 1/20 0.32
MAPK1 P28482 1/20 0.32
TP53 P04637 1/20 0.31
TAAR1 Q96RJ0 2/20 0.30
ALOX15 P16050 1/20 0.30
SLC6A2 P23975 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705081 0.81 LTA4H (0.34) MEN1KMT2AMAPK1TP53
SCHEMBL3680214 0.78 TP53 (0.36) ALDH1A1MAPK1TP53TAAR1ALOX15
SCHEMBL6268335 0.76 CA4 (0.35) ALDH1A1TP53
SCHEMBL630589 0.74 TP53 (0.33) TP53
SCHEMBL20006696 0.74 LTA4H (0.34) TP53
SCHEMBL705286 0.74 LTA4H (0.34) ALDH1A1TSHRTP53
SCHEMBL272625 0.73 MAPK1 (0.37) ALDH1A1TSHRMAPK1TAAR1ALOX15
SCHEMBL707176 0.72 KCNH2 (0.38) TSHRTP53
SCHEMBL19926975 0.72 TP53 (0.32) TP53
SCHEMBL19927509 0.72 TP53 (0.32) TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed