SCHEMBL706249

SCHEMBL706249

CCCO[Si](OCCC)(c1ccccc1)C(C)(C)C

nearest known ligand 0.35

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 2/20 0.33
HPGD P15428 1/20 0.33
LTA4H P09960 2/20 0.32
MAPK1 P28482 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704919 0.90
SCHEMBL702651 0.89 LTA4H (0.42) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL708273 0.84 LTA4H (0.32) ALDH1A1LTA4HMAPK1
SCHEMBL706843 0.81 SMYD2 (0.40) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL707647 0.81 LMNA (0.35) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL712852 0.78 CYP2D6 (0.35) LTA4H
SCHEMBL5305402 0.76 LMNA (0.37) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL105659 0.75 LMNA (0.39) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL703110 0.75 DUT (0.42) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL106121 0.75 LMNA (0.39) LMNAMEN1KMT2AALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed