Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 1/20 | 0.32 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | TP53 | P04637 | 1/20 | 0.31 |
| ▸ | NPC1 | O15118 | 1/20 | 0.31 |
| ▸ | RAB9A | P51151 | 1/20 | 0.31 |
| ▸ | TAAR1 | Q96RJ0 | 2/20 | 0.30 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.30 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.30 |
| ▸ | PIN1 | Q13526 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703915 | 0.89 | — | — | |
| SCHEMBL706249 | 0.84 | LMNA (0.35) | LTA4HMAPK1ALDH1A1 | |
| SCHEMBL10628347 | 0.82 | MAPK1 (0.38) | MAPK1ALDH1A1TAAR1ALOX15 | |
| SCHEMBL702651 | 0.81 | LTA4H (0.42) | LTA4HMAPK1ALDH1A1 | |
| SCHEMBL708399 | 0.79 | SMYD2 (0.36) | LTA4HMAPK1ALDH1A1TP53TAAR1 | |
| SCHEMBL703501 | 0.79 | LTA4H (0.32) | LTA4HMAPK1ALDH1A1TP53TAAR1 | |
| SCHEMBL1314672 | 0.78 | ESR1 (0.32) | LTA4HMAPK1ALDH1A1TP53NPC1 | |
| SCHEMBL28562216 | 0.77 | NR1H2 (0.33) | — | |
| Methylamine SCHEMBL29052258 | 0.76 | SMYD2 (0.35) | LTA4HMAPK1ALDH1A1TAAR1SLC6A2 | |
| SCHEMBL277279 | 0.76 | MAPK1 (0.36) | LTA4HMAPK1ALDH1A1ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| CN-100415752-C | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2008-09-03 | — | — | CN | disclosed |
| US-7413775-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2008-08-19 | — | — | US | disclosed |
| CN-100367472-C | Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device | TOKURI CO LTD (JP) | 2008-02-06 | — | — | CN | disclosed |
| CN-100335488-C | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2007-09-05 | — | — | CN | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-7160625-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2007-01-09 | — | — | US | disclosed |
| CN-1803805-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-07-19 | — | — | CN | disclosed |
| CN-1793151-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-06-28 | — | — | CN | disclosed |
| US-20060127683-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2006-06-15 | — | — | US | disclosed |
| US-20030180550-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2003-09-25 | — | — | US | disclosed |
| CN-1437228-A | Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device | TOKURI CO LTD (JP) | 2003-08-20 | — | — | CN | disclosed |