SCHEMBL706388

SCHEMBL706388

CCCCO[SiH](CCc1ccccc1)OCCCC

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.43
LTA4H P09960 2/20 0.42
MEN1 O00255 1/20 0.41
NPC1 O15118 1/20 0.41
RAB9A P51151 1/20 0.41
KMT2A Q03164 1/20 0.41
KCNH2 Q12809 2/20 0.40
IDO1 P14902 1/20 0.40
ALDH1A1 P00352 2/20 0.40
CYP3A4 P08684 1/20 0.40
TSHR P16473 1/20 0.40
MAPK1 P28482 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
HPGD P15428 1/20 0.39
CETP P11597 1/20 0.38
CHRM2 P08172 1/20 0.38
HTR1A P08908 1/20 0.38
ADRA2A P08913 1/20 0.38
CHRM1 P11229 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706282 0.91 IDO1 (0.43) SIGMAR1LTA4HMEN1NPC1RAB9A
SCHEMBL702249 0.90 KCNH2 (0.45) SIGMAR1MEN1NPC1RAB9AKMT2A
SCHEMBL706073 0.89 IDO1 (0.38) SIGMAR1NPC1RAB9AKCNH2IDO1
SCHEMBL17937571 0.83 KCNH2 (0.43) KCNH2ALDH1A1TDP1HPGD
SCHEMBL21175526 0.83 IDO1 (0.46) SIGMAR1KCNH2IDO1CHRM2HTR1A
SCHEMBL17937759 0.83 CYP1A2 (0.39) MEN1NPC1RAB9AKMT2AALDH1A1
SCHEMBL702245 0.82 IDO1 (0.44) SIGMAR1MEN1KMT2AKCNH2IDO1
SCHEMBL708762 0.81 LTA4H (0.44) SIGMAR1LTA4HMEN1NPC1RAB9A
SCHEMBL17937606 0.81 TAAR1 (0.44) KMT2AIDO1CYP3A4CHRM2CHRM1
SCHEMBL17937615 0.81 CYP1A2 (0.44) IDO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103130825-B The manufacture method of 1,3 difluoro disiloxane compounds 株式会社艾迪科 2016-12-21 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed