SCHEMBL706314

SCHEMBL706314

CCCCO[Si](CCC[Si](OCCCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.43
CYP1A2 P05177 2/20 0.38
CYP2C9 P11712 2/20 0.38
CYP2C19 P33261 2/20 0.38
TSHR P16473 4/20 0.37
TDP1 Q9NUW8 2/20 0.37
L3MBTL1 Q9Y468 2/20 0.37
CYP2D6 P10635 1/20 0.37
CYP19A1 P11511 1/20 0.37
SOAT1 P35610 1/20 0.35
PTGS2 P35354 1/20 0.34
ALDH1A1 P00352 2/20 0.34
TLR8 Q9NR97 1/20 0.34
CYP3A4 P08684 1/20 0.34
MAPK1 P28482 1/20 0.34
RECQL P46063 1/20 0.34
FGFR1 P11362 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707442 0.96 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL704016 0.94 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL702747 0.93 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL707297 0.91 LTA4H (0.36) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL11265902 0.89 SOAT1 (0.42) LTA4HTSHRSOAT1ALDH1A1TLR8
SCHEMBL3481385 0.89 LTA4H (0.39) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706463 0.89 LTA4H (0.46) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL704098 0.87 LTA4H (0.36) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL705096 0.87 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL4590392 0.86 LTA4H (0.35) LTA4HTSHRTDP1L3MBTL1SOAT1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed