SCHEMBL707297

SCHEMBL707297

CCCO[Si](CCC[Si](OCCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.36
LMNA P02545 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 3/20 0.33
SOAT1 P35610 1/20 0.33
HPGD P15428 1/20 0.33
PTGS2 P35354 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704098 0.96 LTA4H (0.36) LTA4HLMNAMEN1KMT2AALDH1A1
SCHEMBL3481385 0.94 LTA4H (0.39) LTA4HLMNAMEN1KMT2ASOAT1
SCHEMBL704046 0.92 KMT2A (0.37) LTA4HLMNAMEN1KMT2AALDH1A1
SCHEMBL706314 0.91 LTA4H (0.43) LTA4HALDH1A1SOAT1PTGS2CYP1A2
SCHEMBL702331 0.90 KMT2A (0.36) LTA4HLMNAMEN1KMT2AALDH1A1
SCHEMBL24433850 0.90 CYP19A1 (0.33) LTA4HLMNAMEN1KMT2ACYP1A2
SCHEMBL707442 0.87 LTA4H (0.43) LTA4HALDH1A1SOAT1PTGS2CYP1A2
SCHEMBL706837 0.86 LMNA (0.38) LTA4HLMNAMEN1KMT2AALDH1A1
SCHEMBL11575801 0.85 LTA4H (0.30) LTA4H
SCHEMBL704016 0.85 LTA4H (0.44) LTA4HALDH1A1SOAT1CYP1A2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed