SCHEMBL3481385

SCHEMBL3481385

CCCC[Si](OCCC)(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.39
SOAT1 P35610 1/20 0.35
CYP1A2 P05177 2/20 0.34
CYP2C9 P11712 2/20 0.34
CYP2C19 P33261 2/20 0.34
LMNA P02545 1/20 0.34
PTGS2 P35354 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
TSHR P16473 2/20 0.33
CYP2D6 P10635 1/20 0.33
CYP19A1 P11511 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
MLNR O43193 1/20 0.33
NR1I2 O75469 1/20 0.33
ESR1 P03372 1/20 0.33
NR3C1 P04150 1/20 0.33
PGR P06401 1/20 0.33
ADRB2 P07550 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707297 0.94 LTA4H (0.36) LTA4HSOAT1CYP1A2CYP2C9CYP2C19
SCHEMBL704098 0.94 LTA4H (0.36) LTA4HSOAT1CYP1A2CYP2C9CYP2C19
SCHEMBL704046 0.90 KMT2A (0.37) LTA4HSOAT1LMNAMEN1KMT2A
SCHEMBL11265902 0.89 SOAT1 (0.42) LTA4HSOAT1LMNAMEN1KMT2A
SCHEMBL707442 0.89 LTA4H (0.43) LTA4HSOAT1CYP1A2CYP2C9CYP2C19
SCHEMBL706314 0.89 LTA4H (0.43) LTA4HSOAT1CYP1A2CYP2C9CYP2C19
SCHEMBL702331 0.89 KMT2A (0.36) LTA4HSOAT1LMNAMEN1KMT2A
SCHEMBL24433850 0.88 CYP19A1 (0.33) LTA4HCYP1A2CYP2C9CYP2C19LMNA
SCHEMBL9504616 0.88 LTA4H (0.36) LTA4HSOAT1CYP1A2CYP2C9CYP2C19
SCHEMBL3481751 0.87 LTA4H (0.36) LTA4HSOAT1PTGS2TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed