SCHEMBL705262

SCHEMBL705262

CCC(Oc1ccccc1)(Oc1ccccc1)[SiH2]CCCC[SiH2]C(CC)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.35
KCNA3 P22001 1/20 0.34
CA4 P22748 1/20 0.32
HTR1B P28222 1/20 0.32
TAAR1 Q96RJ0 1/20 0.31
CHRNB2 P17787 2/20 0.31
CHRNB4 P30926 2/20 0.31
CHRNA3 P32297 2/20 0.31
CHRNA7 P36544 2/20 0.31
CHRNA4 P43681 2/20 0.31
TSHR P16473 1/20 0.30
PPARG P37231 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702540 0.96 LTA4H (0.35) LTA4HKCNA3CA4HTR1BTAAR1
SCHEMBL705986 0.92 LTA4H (0.35) LTA4HKCNA3CA4HTR1BTAAR1
SCHEMBL704155 0.85 LTA4H (0.35) LTA4HKCNA3CA4HTR1BTAAR1
SCHEMBL705627 0.77 KCNA3 (0.37) LTA4HKCNA3CA4HTR1BTSHR
SCHEMBL707992 0.76 CHRNB2 (0.35) LTA4HKCNA3CA4TAAR1CHRNB2
SCHEMBL706555 0.73 KCNA3 (0.37) LTA4HKCNA3CA4HTR1BTSHR
SCHEMBL702066 0.68 CA4 (0.37) LTA4HKCNA3CA4HTR1BTSHR
SCHEMBL9816269 0.67 LTA4H (0.40) LTA4HKCNA3CA4HTR1BCHRNB2
SCHEMBL1453725 0.67 LTA4H (0.40) LTA4HKCNA3CA4CHRNB2CHRNB4
SCHEMBL3081094 0.67 LTA4H (0.40) LTA4HKCNA3CA4CHRNB2CHRNB4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed