SCHEMBL706600

SCHEMBL706600

FC(F)C(F)(F)C(F)(F)Oc1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.35
LTA4H P09960 1/20 0.35
ALDH1A1 P00352 3/20 0.33
HSD17B10 Q99714 1/20 0.33
POLB P06746 2/20 0.33
MAPT P10636 2/20 0.33
ALOX15 P16050 2/20 0.33
MEN1 O00255 1/20 0.33
USP2 O75604 1/20 0.33
TP53 P04637 1/20 0.33
HPGD P15428 1/20 0.33
XBP1 P17861 1/20 0.33
MAPK1 P28482 1/20 0.33
KMT2A Q03164 1/20 0.33
CA4 P22748 1/20 0.32
CYP1A2 P05177 1/20 0.31
CYP2C19 P33261 1/20 0.31
SLC7A5 Q01650 2/20 0.31
S1PR4 O95977 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11679551 0.89 TSHR (0.36) TSHRALDH1A1HSD17B10MAPTUSP2
SCHEMBL7988345 0.88 KIF11 (0.41) TSHRALDH1A1HSD17B10POLBMAPT
SCHEMBL194052 0.79 TSHR (0.44) TSHRLTA4HALDH1A1HSD17B10MAPT
SCHEMBL17133919 0.79
SCHEMBL9488795 0.79 CETP (0.40) MEN1USP2HPGDKMT2ALMNA
SCHEMBL10921751 0.77 ACHE (0.46) ALDH1A1HPGDMAPK1KMT2ALMNA
SCHEMBL17133914 0.77
SCHEMBL6000951 0.77 LTA4H (0.41) TSHRLTA4HALDH1A1POLBCA4
SCHEMBL10586440 0.76 TRPV1 (0.37) TSHRALDH1A1HSD17B10MAPTALOX15
SCHEMBL10585366 0.76 ALDH1A1 (0.30) TSHRALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113929562-B Preparation method of fluoroether 衢州氟硅技术研究院 2024-07-26 CN disclosed
CN-110922304-B Production method of fluoroether 浙江巨化技术中心有限公司 2022-06-03 CN disclosed
CN-113929562-A Preparation method of fluoroether 衢州氟硅技术研究院 2022-01-14 CN disclosed
CN-110922304-A Production method of fluoroether 浙江巨化技术中心有限公司 2020-03-27 CN disclosed
US-8465850-B2 Method for the application of active materials onto a surface and devices made with such methods E I DU PONT DE NEMOURS AND COMPANY (US) 2013-06-18 US disclosed
US-8383192-B2 Process for making contained layers and devices made with same E. I. DU PONT DE NEMOURS AND COMPANY (US) 2013-02-26 US disclosed
US-8287766-B2 depositing fluorinated aryl ethers and polyanilines or polythiophenes combined with fluorinated polysulfonic acids and/or mixtures, onto glass substrates, useful in organic electronic devices; organic light emitting diodes E I DU PONT DE NEMOURS AND COMPANY (US) 2012-10-16 US disclosed
US-8124172-B2 Process for making contained layers and devices made with same E.I. DU PONT DE NEMOURS AND COMPANY (US) 2012-02-28 US disclosed
US-20110183268-A1 PROCESS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME E. I. DU PONT DE NEMOURS AND COMPANY DUPONT DISPLAYS INC (US) 2011-07-28 US disclosed
US-20110180761-A1 METHOD FOR THE APPLICATION OF ACTIVE MATERIALS ONTO A SURFACES AND DEVICES MADE WITH SUCH METHODS E. I. DU PONT DE NEMOURS AND COMPANY (US) 2011-07-28 US disclosed
WO-2007106101-A2 PROCESS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-09-20 WO disclosed
US-20070218582-A1 Process for making contained layers and devices made with same LG CHEM, LTD. (KR) 2007-09-20 US disclosed
US-20070205409-A1 Process for making contained layers and devices made with same E. I. DU PONT DE NEMOURS AND COMPANY 2007-09-06 US disclosed
US-20050269550-A1 Method for the application of active materials onto active surfaces and devices made with such methods PETROV VIACHESLAV A 2005-12-08 US disclosed
US-20050062021-A1 Method for the application of active materials onto active surfaces and devices made with such methods LG CHEM, LTD. (KR) 2005-03-24 US disclosed
EP-0629216-A4 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT. US HEALTH (US) 1995-05-31 EP disclosed
US-5405677-A Fluorinated resins with low dielectric constant THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1995-04-11 US disclosed
EP-0629216-A1 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY (US) 1994-12-21 EP disclosed
US-5292927-A Fluorinated resins with low dielectric constant THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1994-03-08 US disclosed
WO-1993017052-A1 FLUORINATED RESINS WITH LOW DIELECTRIC CONSTANT THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1993-09-02 WO disclosed