SCHEMBL706647

SCHEMBL706647

CC[SiH](CC)OCCCc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.52
LMNA P02545 1/20 0.44
CHRM2 P08172 1/20 0.44
HTR1A P08908 1/20 0.44
ADRA2A P08913 1/20 0.44
CHRM1 P11229 1/20 0.44
DRD1 P21728 1/20 0.44
SLC6A2 P23975 1/20 0.44
SLC6A4 P31645 1/20 0.44
ADRA1A P35348 1/20 0.44
OPRM1 P35372 1/20 0.44
DRD3 P35462 1/20 0.44
SLC6A3 Q01959 1/20 0.44
KCNH2 Q12809 1/20 0.44
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
SIGMAR1 Q99720 2/20 0.41
MAOA P21397 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706330 0.94 IDO1 (0.46) IDO1CHRM2HTR1AADRA2ACHRM1
SCHEMBL3482264 0.90 IDO1 (0.46) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL704244 0.88 TDP1 (0.43) IDO1CHRM2HTR1AADRA2ACHRM1
SCHEMBL3482224 0.88 IDO1 (0.44) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL708505 0.85 IDO1 (0.48) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL708791 0.84 IDO1 (0.47) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL706398 0.80 SIGMAR1 (0.44) IDO1CHRM2HTR1AADRA2ACHRM1
SCHEMBL19809212 0.80 IDO1 (0.47) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL104984 0.80 IDO1 (0.55) IDO1LMNACHRM2HTR1AADRA2A
SCHEMBL3481843 0.79 SIGMAR1 (0.41) IDO1CHRM2HTR1AADRA2ACHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024176969-A1 METHOD FOR PRODUCING CARBONIC ACID DIESTER 国立研究開発法人産業技術総合研究所 2024-08-29 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed