SCHEMBL706398

SCHEMBL706398

CCC[SiH](CCC)OCCCCc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 3/20 0.44
IDO1 P14902 1/20 0.43
KCNH2 Q12809 2/20 0.42
L3MBTL1 Q9Y468 2/20 0.42
TDP1 Q9NUW8 1/20 0.42
MAOA P21397 1/20 0.41
CHRM2 P08172 1/20 0.41
HTR1A P08908 1/20 0.41
ADRA2A P08913 1/20 0.41
CHRM1 P11229 1/20 0.41
DRD1 P21728 1/20 0.41
SLC6A2 P23975 1/20 0.41
SLC6A4 P31645 1/20 0.41
ADRA1A P35348 1/20 0.41
OPRM1 P35372 1/20 0.41
DRD3 P35462 1/20 0.41
SLC6A3 Q01959 1/20 0.41
MAOB P27338 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708505 0.95 IDO1 (0.48) SIGMAR1IDO1KCNH2L3MBTL1CHRM2
SCHEMBL702998 0.92 KCNH2 (0.45) SIGMAR1IDO1KCNH2L3MBTL1TDP1
SCHEMBL3482264 0.88 IDO1 (0.46) SIGMAR1IDO1KCNH2CHRM2HTR1A
SCHEMBL707033 0.87 TDP1 (0.40) SIGMAR1IDO1KCNH2TDP1CHRM2
SCHEMBL708791 0.86 IDO1 (0.47) SIGMAR1IDO1KCNH2CHRM2HTR1A
SCHEMBL706330 0.86 IDO1 (0.46) SIGMAR1IDO1KCNH2L3MBTL1TDP1
SCHEMBL3481959 0.81 IDO1 (0.42) SIGMAR1IDO1KCNH2L3MBTL1CHRM2
SCHEMBL3481879 0.81 TDP1 (0.38) SIGMAR1IDO1KCNH2TDP1CHRM2
SCHEMBL705824 0.81 SIGMAR1 (0.43) SIGMAR1IDO1KCNH2TDP1CHRM2
SCHEMBL706647 0.80 IDO1 (0.52) SIGMAR1IDO1KCNH2L3MBTL1MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed