SCHEMBL3481843

SCHEMBL3481843

CCCC[SiH](CC)OCCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.41
KCNH2 Q12809 2/20 0.38
IDO1 P14902 1/20 0.38
PTGES O14684 2/20 0.37
ALOX5 P09917 2/20 0.37
PPARG P37231 2/20 0.37
CTSK P43235 1/20 0.37
MEN1 O00255 1/20 0.37
NPC1 O15118 1/20 0.37
RAB9A P51151 1/20 0.37
KMT2A Q03164 1/20 0.37
CETP P11597 1/20 0.36
CHRM2 P08172 1/20 0.36
HTR1A P08908 1/20 0.36
ADRA2A P08913 1/20 0.36
CHRM1 P11229 1/20 0.36
DRD1 P21728 1/20 0.36
SLC6A2 P23975 1/20 0.36
SLC6A4 P31645 1/20 0.36
ADRA1A P35348 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705824 0.93 SIGMAR1 (0.43) SIGMAR1KCNH2IDO1PTGESALOX5
SCHEMBL3482224 0.92 IDO1 (0.44) SIGMAR1KCNH2IDO1CTSKCHRM2
SCHEMBL3481879 0.90 TDP1 (0.38) SIGMAR1KCNH2IDO1NPC1RAB9A
SCHEMBL704244 0.86 TDP1 (0.43) KCNH2IDO1NPC1RAB9ACHRM2
SCHEMBL708791 0.85 IDO1 (0.47) SIGMAR1KCNH2IDO1CTSKCHRM2
SCHEMBL6696770 0.83 HTR2A (0.44) IDO1NPC1RAB9A
SCHEMBL3482264 0.83 IDO1 (0.46) SIGMAR1KCNH2IDO1CHRM2HTR1A
SCHEMBL3481959 0.83 IDO1 (0.42) SIGMAR1KCNH2IDO1CHRM2HTR1A
SCHEMBL702998 0.83 KCNH2 (0.45) SIGMAR1KCNH2IDO1
SCHEMBL3481604 0.83 CETP (0.41) SIGMAR1IDO1CETP

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed