SCHEMBL704244

SCHEMBL704244

CC[SiH](CC)OCCc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.43
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA9 Q16790 1/20 0.41
TP53 P04637 1/20 0.41
IDO1 P14902 1/20 0.41
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
ALDH1A1 P00352 1/20 0.39
HPGD P15428 1/20 0.39
ALOX15 P16050 1/20 0.39
ALOX12 P18054 1/20 0.39
CASP1 P29466 1/20 0.39
HSD17B10 Q99714 1/20 0.39
TAAR1 Q96RJ0 3/20 0.39
ATM Q13315 1/20 0.39
CHRM2 P08172 1/20 0.38
HTR1A P08908 1/20 0.38
ADRA2A P08913 1/20 0.38
CHRM1 P11229 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481879 0.89 TDP1 (0.38) TDP1CA1CA2CA9TP53
SCHEMBL706647 0.88 IDO1 (0.52) IDO1CHRM2HTR1AADRA2ACHRM1
SCHEMBL706330 0.86 IDO1 (0.46) TDP1IDO1CHRM2HTR1AADRA2A
SCHEMBL3481843 0.86 SIGMAR1 (0.41) IDO1NPC1RAB9ACHRM2HTR1A
SCHEMBL6696770 0.86 HTR2A (0.44) CA1CA2CA9IDO1NPC1
SCHEMBL707033 0.84 TDP1 (0.40) TDP1CA1CA2CA9TP53
SCHEMBL28938432 0.82 CA1 (0.40) TDP1CA1CA2CA9TP53
SCHEMBL705824 0.81 SIGMAR1 (0.43) TDP1IDO1NPC1RAB9ACHRM2
SCHEMBL9248772 0.80 ALDH1A1 (0.38) TDP1CA1CA2CA9TP53
SCHEMBL19809202 0.79 CA1 (0.38) TDP1CA1CA2CA9TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN claimed
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
CN-111448224-A Urea-bonded tetrafunctional (meth) acrylate compound and composition containing same 捷恩智株式会社 2020-07-24 CN disclosed
WO-2019194108-A1 UREA-BINDING TETRAFUNCTIONAL (METH)ACRYLATE COMPOUND AND COMPOSITION CONTAINING SAME JNC株式会社 2019-10-10 WO disclosed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US disclosed
US-20130331520-A1 STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2013-12-12 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed