SCHEMBL706708

SCHEMBL706708

CC(=O)O[Si](OC(C)=O)(OC(C)=O)c1ccc([Si](OC(C)=O)(OC(C)=O)OC(C)=O)cc1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPGD P15428 3/20 0.34
LMNA P02545 2/20 0.34
ALDH1A1 P00352 4/20 0.32
TSHR P16473 2/20 0.32
MAPT P10636 2/20 0.31
POLB P06746 2/20 0.31
PKM P14618 1/20 0.31
RAB9A P51151 1/20 0.31
ACHE P22303 1/20 0.31
NPSR1 Q6W5P4 1/20 0.30
ELANE P08246 1/20 0.30
CYP3A4 P08684 1/20 0.30
KDM4E B2RXH2 1/20 0.30
ESR1 P03372 1/20 0.30
ITGB3 P05106 1/20 0.30
ITGA2B P08514 1/20 0.30
HMGB1 P09429 1/20 0.30
GGT1 P19440 1/20 0.30
PTGS1 P23219 1/20 0.30
PTGS2 P35354 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6562707 0.91 LMNA (0.48) HPGDLMNAALDH1A1MAPTPKM
SCHEMBL27722872 0.91 ESR1 (0.40) HPGDLMNAALDH1A1TSHRMAPT
SCHEMBL15737056 0.89 CES2 (0.38) ALDH1A1TSHRMAPTPOLBRAB9A
SCHEMBL132933 0.88 CES2 (0.43) HPGDLMNAALDH1A1TSHRMAPT
SCHEMBL27835021 0.87 CES2 (0.47) LMNAMAPTRAB9A
SCHEMBL15735643 0.85 CES2 (0.45) HPGDALDH1A1MAPTKDM4EHSD17B10
SCHEMBL19548017 0.84 ALDH1A1 (0.41) LMNAALDH1A1TSHRMAPTCYP3A4
SCHEMBL11445214 0.84 CA1 (0.41) ALDH1A1MAPTPOLBRAB9AKDM4E
SCHEMBL15736429 0.84 BCL2L1 (0.42) LMNAALDH1A1PKMRAB9AKDM4E
SCHEMBL15738253 0.81 PREP (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed