SCHEMBL706733

SCHEMBL706733

CC(C)(C)[Si](Oc1ccccc1)(Oc1ccccc1)c1ccc([Si](Oc2ccccc2)(Oc2ccccc2)C(C)(C)C)cc1

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.33
RIPK1 Q13546 1/20 0.32
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
ATM Q13315 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
KCNA3 P22001 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705266 0.96 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL706222 0.78 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL429409 0.77 CA4 (0.43) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL426731 0.75 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL706748 0.75 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL711562 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL704145 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL2368966 0.73 PREP (0.45) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL277279 0.73 MAPK1 (0.36) CA4LTA4HMAPK1ALDH1A1ALOX15
SCHEMBL705058 0.71 MAPK1 (0.34) TSHRMAPK1ALDH1A1ALOX15ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed