SCHEMBL706222

SCHEMBL706222

CC(C)(C)[Si](Oc1ccccc1)(c1ccc([Si](Oc2ccccc2)(C(C)(C)C)C(C)(C)C)cc1)C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.33
HTR1B P28222 2/20 0.32
RIPK1 Q13546 1/20 0.32
HTR1D P28221 1/20 0.32
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
L3MBTL1 Q9Y468 2/20 0.31
ATM Q13315 1/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
KCNA3 P22001 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL711562 0.96 CA4 (0.37) CA4LTA4HTSHRMAPK1HTR1B
SCHEMBL706733 0.78 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL429409 0.77 CA4 (0.43) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL426731 0.75 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL706748 0.75 CA4 (0.42) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL704145 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL705266 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL2368966 0.73 PREP (0.45) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL702695 0.73 MAPK1 (0.36) CA4LTA4HMAPK1ALDH1A1ALOX15
SCHEMBL705719 0.71 MAPK1 (0.34) TSHRMAPK1ALDH1A1ALOX15ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed