SCHEMBL706768

SCHEMBL706768

CCC(=O)O[SiH](OC(=O)CC)c1ccc([SiH](OC(=O)CC)OC(=O)CC)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HIF1A Q16665 3/20 0.38
ESR1 P03372 2/20 0.38
RECQL P46063 1/20 0.38
KMT2A Q03164 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
ALOX15 P16050 1/20 0.37
HTT P42858 1/20 0.36
ALDH1A1 P00352 3/20 0.35
CYP1A2 P05177 1/20 0.35
HPGD P15428 1/20 0.35
CYP2C19 P33261 1/20 0.35
BLM P54132 1/20 0.35
WRN Q14191 1/20 0.35
ELANE P08246 1/20 0.35
ACHE P22303 3/20 0.33
KDM4E B2RXH2 1/20 0.32
GAA P10253 1/20 0.31
NAAA Q02083 1/20 0.30
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1053845 0.90 ELANE (0.43) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7858657 0.86 TAS1R3 (0.38) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7858563 0.73 TP53 (0.39) KMT2ASMN1; SMN2ALOX15ALDH1A1ACHE
SCHEMBL7057364 0.72 ELANE (0.43) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7056823 0.71 ELANE (0.42) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7759598 0.70 ELANE (0.41) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL338659 0.69 ALDH1A1 (0.41) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7893857 0.67 ALDH1A1 (0.39) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL1498107 0.67 ALDH1A1 (0.39) HIF1AESR1RECQLKMT2ASMN1; SMN2
SCHEMBL7060594 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed