SCHEMBL706775

SCHEMBL706775

CCCCO[Si](CCC)(CCC)c1ccc([Si](CCC)(CCC)OCCCC)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 7/20 0.36
CYP3A4 P08684 4/20 0.36
LTA4H P09960 3/20 0.34
CYP2C9 P11712 6/20 0.33
CYP2C19 P33261 6/20 0.33
CYP1A2 P05177 5/20 0.33
NR5A1 Q13285 1/20 0.33
AR P10275 1/20 0.33
TSHR P16473 2/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
LMNA P02545 1/20 0.33
GLA P06280 1/20 0.33
POLB P06746 1/20 0.33
GAA P10253 1/20 0.33
MAPT P10636 1/20 0.33
HPGD P15428 1/20 0.33
KMT2A Q03164 1/20 0.33
CYP19A1 P11511 6/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707158 0.92 AR (0.37) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19
SCHEMBL17937667 0.91 SMN1; SMN2 (0.38) CYP2D6CYP3A4L3MBTL1ALDH1A1LMNA
SCHEMBL17937683 0.91 MGLL (0.38) CYP2D6CYP3A4CYP2C19CYP1A2L3MBTL1
SCHEMBL706395 0.90 LTA4H (0.43) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19
SCHEMBL705492 0.87 NR1H2 (0.33)
SCHEMBL702167 0.85 CYP2D6 (0.37) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19
SCHEMBL17937674 0.83 SMN1; SMN2 (0.38) CYP2D6CYP3A4ARL3MBTL1ALDH1A1
SCHEMBL17937670 0.83 MGLL (0.38) CYP2D6CYP3A4CYP2C19CYP1A2AR
SCHEMBL705077 0.83 AR (0.37) CYP2D6CYP3A4LTA4HAR
SCHEMBL702995 0.82 LTA4H (0.43) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed