SCHEMBL707158

SCHEMBL707158

CCCCO[Si](CCCC)(CCCC)c1ccc([Si](CCCC)(CCCC)OCCCC)cc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
AR P10275 1/20 0.37
CYP2D6 P10635 7/20 0.36
CYP3A4 P08684 4/20 0.36
NR1H2 P55055 1/20 0.35
NR1H3 Q13133 1/20 0.35
LTA4H P09960 3/20 0.34
CYP2C9 P11712 6/20 0.33
CYP2C19 P33261 6/20 0.33
CYP1A2 P05177 5/20 0.33
NR5A1 Q13285 1/20 0.33
CYP19A1 P11511 6/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HSD17B10 Q99714 1/20 0.33
KDM4E B2RXH2 1/20 0.33
TSHR P16473 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706775 0.92 CYP2D6 (0.36) ARCYP2D6CYP3A4LTA4HCYP2C9
SCHEMBL705077 0.92 AR (0.37) ARCYP2D6CYP3A4NR1H2NR1H3
SCHEMBL17937674 0.91 SMN1; SMN2 (0.38) ARCYP2D6CYP3A4NPC1RAB9A
SCHEMBL17937670 0.91 MGLL (0.38) ARCYP2D6CYP3A4NR1H2NR1H3
SCHEMBL702995 0.90 LTA4H (0.43) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19
SCHEMBL712784 0.85 AR (0.38) ARNR1H2NR1H3
SCHEMBL702167 0.85 CYP2D6 (0.37) CYP2D6CYP3A4LTA4HCYP2C9CYP2C19
SCHEMBL28062848 0.83 MGLL (0.35) ARCYP2D6NR1H2NR1H3CYP2C19
SCHEMBL17937683 0.83 MGLL (0.38) CYP2D6CYP3A4CYP2C19CYP1A2NPC1
SCHEMBL28062938 0.83 SMN1; SMN2 (0.35) ARNR1H2NR1H3NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed