SCHEMBL706778

SCHEMBL706778

CC[SiH](CC)c1ccc([SiH](CC)CC)cc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL20578142 0.97
SCHEMBL15959321 0.88 ACHE (0.44)
SCHEMBL27338704 0.86 MAPT (0.42)
SCHEMBL80927 0.84 TP53 (0.41)
SCHEMBL29364620 0.84 RELA (0.38)
Fluoride SCHEMBL27660896 0.82 TP53 (0.39)
Water SCHEMBL20720558 0.82 TP53 (0.39)
SCHEMBL10613551 0.80 ALDH1A1 (0.50)
SCHEMBL29940589 0.79
SCHEMBL16341837 0.78 GRIK2 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-62207334-A None JP disclosed
US-9507054-B2 Composition for forming an article having excellent reflectance and flame retardant properties and article formed therefrom DOW CORNING CORPORATION (US) 2016-11-29 US disclosed
WO-2016044547-A1 3D PRINTING METHOD UTILIZING A PHOTOCURABLE SILICONE COMPOSITION DOW CORNING CORPORATION (US) 2016-03-24 WO disclosed
US-20150362628-A1 Composition For Forming An Article Having Excellent Reflectance And Flame Retardant Properties And Article Formed Therefrom DOW SILICONES CORPORATION 2015-12-17 US disclosed
US-9187602-B2 Heteroelement siloxane compounds and polymers DOW CORNING CORPORATION (US) 2015-11-17 US disclosed
US-20150171249-A1 PHOTOVOLTAIC CELL MODULE AND METHOD OF FORMING DOW SILICONES CORPORATION 2015-06-18 US disclosed
US-9012547-B2 Hydrosilylation cured silicone resins plasticized by organophosphorous compounds DOW CORNING CORPORATION (US) 2015-04-21 US disclosed
EP-2599836-B1 CURABLE COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION ADEKA CORP (JP) 2015-03-25 EP disclosed
US-20150000735-A1 Method Of Forming A Photovoltaic Cell Module Having Improved Impact Resistance DOW CORNING CORPORATION 2015-01-01 US disclosed
US-8920931-B2 Phosphosiloxane resins, and curable silicone compositions, free-standing films, and laminates comprising the phosphosiloxane resins DOW CORNING CORPORATION (US) 2014-12-30 US disclosed
US-8252882-B2 Polyimide resin produced by using silphenylene compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-28 US disclosed
US-20120126435-A1 CURABLE COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION ADEKA CORPORATION (JP) 2012-05-24 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-8048978-B2 Silphenylene compound and process for producing the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-01 US disclosed
US-20110251371-A1 POLYIMIDE RESIN PRODUCED BY USING SILPHENYLENE COMPOUND SUGO MICHIHIRO 2011-10-13 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090156753-A1 SILPHENYLENE COMPOUND AND PROCESS FOR PRODUCING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-06-18 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
JP-S62207334-A SILICON CARBIDE POLYMER NIPPON PETROCHEM CO LTD 1987-09-11 JP disclosed