SCHEMBL706782

SCHEMBL706782

CCCCO[Si](c1ccc([Si](OCCCC)(C(C)(C)C)C(C)(C)C)cc1)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 7/20 0.35
CYP3A4 P08684 3/20 0.35
CYP1A2 P05177 6/20 0.34
CYP2C9 P11712 6/20 0.34
CYP2C19 P33261 6/20 0.34
CYP19A1 P11511 5/20 0.34
LTA4H P09960 3/20 0.33
NR5A1 Q13285 1/20 0.32
NPC1 O15118 2/20 0.32
RAB9A P51151 2/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
HSD17B10 Q99714 1/20 0.32
KDM4E B2RXH2 1/20 0.32
TSHR P16473 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703820 0.91 LTA4H (0.42) CYP2D6CYP1A2CYP2C9CYP2C19CYP19A1
SCHEMBL703373 0.88
SCHEMBL712852 0.80 CYP2D6 (0.35) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19
SCHEMBL705890 0.79
SCHEMBL707647 0.78 LMNA (0.35) LTA4HSMN1; SMN2KDM4E
SCHEMBL977974 0.74 CYP2D6 (0.39) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19
SCHEMBL704788 0.72 CYP2C9 (0.39) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19
SCHEMBL705222 0.72 CYP2C9 (0.41) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19
SCHEMBL702653 0.72 LTA4H (0.42) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19
SCHEMBL702651 0.72 LTA4H (0.42) CYP2D6CYP3A4CYP1A2CYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed