SCHEMBL703820

SCHEMBL703820

CCCCO[Si](c1ccccc1)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.42
CYP1A2 P05177 2/20 0.37
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
ALDH1A1 P00352 4/20 0.36
TSHR P16473 3/20 0.36
TDP1 Q9NUW8 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP19A1 P11511 1/20 0.36
HPGD P15428 1/20 0.36
HIF1A Q16665 1/20 0.35
KDM4E B2RXH2 4/20 0.35
LMNA P02545 2/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
POLB P06746 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706782 0.91 CYP2D6 (0.35) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL707647 0.89 LMNA (0.35) LTA4HALDH1A1HPGDKDM4ELMNA
SCHEMBL702651 0.82 LTA4H (0.42) LTA4HCYP1A2CYP2C9CYP2C19ALDH1A1
SCHEMBL702653 0.82 LTA4H (0.42) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL703501 0.81 LTA4H (0.32) LTA4HALDH1A1HPGDKDM4ESMN1; SMN2
SCHEMBL1314690 0.81 LTA4H (0.41) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL703373 0.79
SCHEMBL5488886 0.77 LTA4H (0.42) LTA4HALDH1A1TSHRLMNASMN1; SMN2
SCHEMBL431649 0.77 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19ALDH1A1
SCHEMBL705748 0.77 DUT (0.47) LTA4HCYP1A2CYP2C9CYP2C19ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed