SCHEMBL705222

SCHEMBL705222

CCCCO[Si](C)(C)c1ccc([Si](C)(C)OCCCC)cc1

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CYP2C9 P11712 8/20 0.41
CYP2C19 P33261 8/20 0.41
CYP19A1 P11511 8/20 0.41
CYP1A2 P05177 7/20 0.41
CYP2D6 P10635 5/20 0.41
CYP3A4 P08684 3/20 0.38
LTA4H P09960 3/20 0.36
NR5A1 Q13285 1/20 0.35
TSHR P16473 2/20 0.35
NPC1 O15118 2/20 0.35
RAB9A P51151 2/20 0.35
HSD17B10 Q99714 2/20 0.35
KDM4E B2RXH2 1/20 0.35
ALDH1A1 P00352 1/20 0.35
LMNA P02545 1/20 0.35
MAPT P10636 1/20 0.35
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17937863 0.90 MGLL (0.36) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL17937734 0.90 POLB (0.40) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL706190 0.90 LTA4H (0.46) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL705459 0.86 CYP19A1 (0.32) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL23493413 0.86 CHRNB2 (0.41) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL23493459 0.84 TSHR (0.35) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6
SCHEMBL2598243 0.82 LTA4H (0.44) CYP2C9CYP2C19CYP3A4LTA4HTSHR
SCHEMBL18417879 0.82 LTA4H (0.44) CYP2C9CYP2C19CYP3A4LTA4HTSHR
SCHEMBL9805244 0.82 LTA4H (0.44) CYP2C9CYP2C19CYP3A4LTA4HTSHR
SCHEMBL704788 0.82 CYP2C9 (0.39) CYP2C9CYP2C19CYP19A1CYP1A2CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed