SCHEMBL706902

SCHEMBL706902

CC(C)O[SiH2]c1ccccc1C(C)C

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.40
GABRB2 P47870 2/20 0.40
LMNA P02545 3/20 0.37
FAAH O00519 2/20 0.37
GABRG2 P18507 2/20 0.37
GABRB3 P28472 2/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CYP1A2 P05177 1/20 0.37
CYP3A4 P08684 1/20 0.37
HPGD P15428 1/20 0.37
TSHR P16473 1/20 0.37
GABRB1 P18505 1/20 0.37
PTGS1 P23219 1/20 0.37
SLC6A2 P23975 1/20 0.37
HTR2C P28335 1/20 0.37
GABRA5 P31644 1/20 0.37
GABRA3 P34903 1/20 0.37
HTR2B P41595 1/20 0.37
GABRA2 P47869 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2961097 0.84 ALDH1A1 (0.32) L3MBTL1ALDH1A1
SCHEMBL704148 0.82 GABRA1 (0.38) GABRA1GABRB2LMNAFAAHGABRG2
SCHEMBL29066982 0.81 GABRA1 (0.41) GABRA1GABRB2LMNAFAAHGABRG2
SCHEMBL706201 0.77 ACHE (0.38) LMNACA1CA2CYP1A2CYP3A4
SCHEMBL705571 0.76 GABRA1 (0.39) GABRA1GABRB2LMNAFAAHGABRG2
SCHEMBL28929236 0.75 GABRA1 (0.48) GABRA1GABRB2LMNAFAAHGABRG2
SCHEMBL1639607 0.74
SCHEMBL28351568 0.73 CA1 (0.46) LMNACA1CA2CYP3A4HPGD
SCHEMBL713113 0.73 GABRA1 (0.39) GABRA1GABRB2LMNAFAAHGABRG2
SCHEMBL31216267 0.73 GABRA1 (0.46) GABRA1GABRB2LMNAFAAHGABRG2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed