Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 1/20 | 0.44 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.44 |
| ▸ | SIGMAR1 | Q99720 | 6/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.43 |
| ▸ | MAOA | P21397 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL715341 | 0.95 | IDO1 (0.50) | IDO1FFAR1SIGMAR1 | |
| SCHEMBL705406 | 0.87 | TDP1 (0.41) | IDO1FFAR1SIGMAR1TDP1 | |
| SCHEMBL28656460 | 0.81 | TDP1 (0.37) | IDO1FFAR1SIGMAR1TDP1 | |
| SCHEMBL703011 | 0.79 | IDO1 (0.48) | IDO1FFAR1SIGMAR1L3MBTL1TDP1 | |
| SCHEMBL702731 | 0.76 | IDO1 (0.46) | IDO1FFAR1SIGMAR1L3MBTL1TDP1 | |
| SCHEMBL22281732 | 0.76 | IDO1 (0.48) | IDO1SIGMAR1L3MBTL1TDP1MAOA | |
| SCHEMBL707596 | 0.75 | IDO1 (0.44) | IDO1FFAR1SIGMAR1L3MBTL1TDP1 | |
| SCHEMBL711282 | 0.75 | TSHR (0.46) | IDO1SIGMAR1L3MBTL1TDP1MAOA | |
| SCHEMBL9205158 | 0.74 | TDP1 (0.49) | IDO1SIGMAR1L3MBTL1TDP1 | |
| SCHEMBL22861338 | 0.74 | TDP1 (0.49) | IDO1SIGMAR1L3MBTL1TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |