SCHEMBL705406

SCHEMBL705406

CC(C)[SiH2]OCCc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.41
CA1 P00915 1/20 0.40
CA2 P00918 1/20 0.40
CA9 Q16790 1/20 0.40
ALDH1A1 P00352 2/20 0.39
IDO1 P14902 1/20 0.39
SIGMAR1 Q99720 4/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
FFAR1 O14842 1/20 0.39
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38
ALOX12 P18054 1/20 0.38
CASP1 P29466 1/20 0.38
HSD17B10 Q99714 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28656460 0.89 TDP1 (0.37) TDP1CA1CA2CA9ALDH1A1
SCHEMBL715341 0.89 IDO1 (0.50) IDO1SIGMAR1FFAR1HPGD
SCHEMBL707197 0.87 IDO1 (0.44) TDP1IDO1SIGMAR1FFAR1
SCHEMBL10356064 0.81 CA1 (0.38) TDP1CA1CA2CA9ALDH1A1
SCHEMBL15122593 0.80 CA1 (0.39) CA1CA2CA9ALDH1A1IDO1
SCHEMBL711282 0.79 TSHR (0.46) TDP1CA1CA2CA9ALDH1A1
SCHEMBL28656462 0.78 CA1 (0.36) CA1CA2CA9IDO1SIGMAR1
SCHEMBL704523 0.77 CA1 (0.44) TDP1CA1CA2CA9ALDH1A1
SCHEMBL28658222 0.74 KCNA3 (0.50) ALDH1A1SIGMAR1RAB9AHPGD
SCHEMBL8695955 0.74 RIPK1 (0.37) CA1CA2CA9IDO1SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed