SCHEMBL707249

SCHEMBL707249

CC(C)(C)[Si](F)(F)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 2/20 0.36
NR1H3 Q13133 2/20 0.36
ESR1 P03372 3/20 0.34
ESR2 Q92731 3/20 0.34
MAPK1 P28482 1/20 0.33
ALDH1A1 P00352 3/20 0.32
TSHR P16473 2/20 0.32
TAAR1 Q96RJ0 2/20 0.31
ALOX15 P16050 1/20 0.31
SLC6A2 P23975 1/20 0.31
LMNA P02545 1/20 0.30
ALOX12 P18054 1/20 0.30
ACHE P22303 1/20 0.30
ATM Q13315 1/20 0.30
CYP3A4 P08684 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703635 0.86 NR1H2 (0.37) NR1H2NR1H3
SCHEMBL13933322 0.79 NR1H2 (0.36) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL702684 0.79 NR1H2 (0.36) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL704604 0.79 NR1H2 (0.36) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL20328588 0.72 ESR1 (0.37) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL3526796 0.72 ESR1 (0.37) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL3888384 0.72 ESR1 (0.37) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL29749402 0.72 ESR1 (0.37) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL8381381 0.70 TAAR1 (0.37) NR1H2NR1H3ESR1ESR2MAPK1
SCHEMBL6013056 0.70 ESR1 (0.41) NR1H2NR1H3ESR1ESR2MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed