Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPK1 | P28482 | 1/20 | 0.32 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14841823 | 0.81 | RIPK1 (0.31) | RIPK1KDM4E | |
| SCHEMBL704691 | 0.81 | MAPK1 (0.33) | MAPK1RIPK1ALDH1A1ALOX15 | |
| SCHEMBL705549 | 0.79 | MAPK1 (0.37) | MAPK1RIPK1ALDH1A1ALOX15 | |
| SCHEMBL27910493 | 0.78 | NR1H2 (0.34) | MAPK1 | |
| SCHEMBL301441 | 0.76 | CA4 (0.35) | ALDH1A1ALOX15KDM4E | |
| SCHEMBL705651 | 0.74 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL27910484 | 0.73 | RIPK1 (0.31) | RIPK1 | |
| SCHEMBL430199 | 0.73 | MAPK1 (0.37) | MAPK1ALDH1A1ALOX15 | |
| SCHEMBL191229 | 0.73 | MAPK1 (0.37) | MAPK1ALDH1A1ALOX15 | |
| SCHEMBL704060 | 0.73 | MAPK1 (0.37) | MAPK1ALDH1A1ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2584005-B1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF | TOSOH CORP (JP) | 2018-02-21 | — | — | EP | disclosed |
| US-8907038-B2 | Typical metal containing polysiloxane composition, process for its production, and its uses | TOSOH CORPORATION (JP) | 2014-12-09 | — | — | US | disclosed |
| EP-2584005-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF | Tosoh Corporation (JP) | 2013-04-24 | — | — | EP | disclosed |
| US-20130090447-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES | TOSOH CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |