SCHEMBL704060

SCHEMBL704060

CC(C)(C)O[Si](c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.37
ALDH1A1 P00352 2/20 0.34
ALOX15 P16050 1/20 0.34
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33
TSHR P16473 1/20 0.33
HSD17B10 Q99714 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
NR1H2 P55055 2/20 0.31
NR1H3 Q13133 2/20 0.31
CA4 P22748 1/20 0.31
TAAR1 Q96RJ0 2/20 0.30
SLC6A2 P23975 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703641 0.98 ESR1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL2504306 0.83 ALDH1A1 (0.43) ALDH1A1TSHR
SCHEMBL2501155 0.82 PAX8 (0.33) ALDH1A1ESR1ESR2TSHRHSD17B10
SCHEMBL191229 0.80 MAPK1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL430199 0.80 MAPK1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL7178758 0.79 MAPK1 (0.43) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL2499549 0.79 TP53 (0.41) ALDH1A1TSHRTDP1
SCHEMBL703604 0.78 ESR1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL707822 0.78 ESR1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL703701 0.78 ESR1 (0.37) MAPK1ALDH1A1ALOX15ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-6787193-B2 DECOMPOSITION OF AN ORGANOSILICON COMPOUND JSR CORPORATION (JP) 2004-09-07 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed