SCHEMBL707594

SCHEMBL707594

CC(C)(C)CCCC(O[SiH3])c1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.51
SLC6A4 P31645 2/20 0.36
SLC7A5 Q01650 8/20 0.35
CTSK P43235 2/20 0.34
CASR P41180 1/20 0.34
HTR2A P28223 2/20 0.33
HRH1 P35367 2/20 0.33
LMNA P02545 1/20 0.33
SLC6A2 P23975 1/20 0.33
SLC6A3 Q01959 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705122 0.89 RIPK1 (0.56) RIPK1SLC6A4HTR2AHRH1LMNA
SCHEMBL703009 0.80 POLB (0.41) SLC6A4SLC7A5CTSKCASR
SCHEMBL707195 0.79 SLC7A5 (0.39) RIPK1SLC6A4SLC7A5CASRHTR2A
SCHEMBL702729 0.79 SLC7A5 (0.42) SLC6A4SLC7A5HTR2A
SCHEMBL713133 0.78 RIPK1 (0.41) RIPK1SLC6A4HTR2AHRH1LMNA
SCHEMBL704444 0.77 CYP19A1 (0.43) SLC7A5HTR2A
SCHEMBL706088 0.77 CYP19A1 (0.43) SLC7A5HTR2A
SCHEMBL15327775 0.77 HRH1 (0.40) SLC6A4SLC7A5HTR2AHRH1
SCHEMBL5704251 0.77 HRH1 (0.59) SLC6A4SLC7A5HTR2AHRH1SLC6A2
SCHEMBL12928765 0.76 RIPK1 (0.85) RIPK1SLC6A4LMNASLC6A2SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed