SCHEMBL707195

SCHEMBL707195

CC(C)CCCC(O[SiH3])c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC7A5 Q01650 1/20 0.39
SLC6A4 P31645 2/20 0.38
MEN1 O00255 1/20 0.37
ALDH1A1 P00352 1/20 0.37
HTT P42858 1/20 0.37
KMT2A Q03164 1/20 0.37
AOC3 Q16853 2/20 0.36
POLB P06746 1/20 0.36
CTDSP1 Q9GZU7 1/20 0.36
HTR2A P28223 4/20 0.35
HRH1 P35367 4/20 0.35
TAAR1 Q96RJ0 2/20 0.35
RIPK1 Q13546 1/20 0.35
GPR88 Q9GZN0 1/20 0.35
TDP1 Q9NUW8 1/20 0.34
CHRM2 P08172 1/20 0.34
HTR1A P08908 1/20 0.34
ADRA2A P08913 1/20 0.34
ADORA3 P0DMS8 1/20 0.34
CHRM1 P11229 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL715339 0.89 POLB (0.41) SLC6A4MEN1KMT2AAOC3POLB
SCHEMBL703009 0.83 POLB (0.41) SLC7A5SLC6A4ALDH1A1POLBOPRM1
SCHEMBL702729 0.81 SLC7A5 (0.42) SLC7A5SLC6A4ALDH1A1POLBHTR2A
SCHEMBL706088 0.80 CYP19A1 (0.43) SLC7A5ALDH1A1HTR2AOPRM1KCNH2
SCHEMBL704444 0.80 CYP19A1 (0.43) SLC7A5ALDH1A1HTR2AOPRM1KCNH2
SCHEMBL15327775 0.79 HRH1 (0.40) SLC7A5SLC6A4HTR2AHRH1TAAR1
SCHEMBL5704251 0.79 HRH1 (0.59) SLC7A5SLC6A4HTR2AHRH1TAAR1
SCHEMBL29241788 0.79 ALDH1A1 (0.39) SLC7A5SLC6A4MEN1ALDH1A1HTT
SCHEMBL707594 0.79 RIPK1 (0.51) SLC7A5SLC6A4HTR2AHRH1RIPK1
SCHEMBL705168 0.79 AOC3 (0.42) SLC6A4MEN1KMT2AAOC3HTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed