SCHEMBL705122

SCHEMBL705122

CC(C)(C)CCC(O[SiH3])c1ccccc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.56
SLC6A4 P31645 8/20 0.38
HTR2A P28223 5/20 0.35
HRH1 P35367 5/20 0.35
TDP1 Q9NUW8 1/20 0.34
CYP2D6 P10635 6/20 0.34
CYP1A2 P05177 5/20 0.34
CYP3A4 P08684 5/20 0.34
SLC6A2 P23975 5/20 0.34
TSHR P16473 4/20 0.34
SLC6A3 Q01959 4/20 0.34
HRH3 Q9Y5N1 4/20 0.34
KMT2A Q03164 4/20 0.34
CHRM1 P11229 3/20 0.34
ADRA2B P18089 3/20 0.34
HTR2C P28335 3/20 0.34
OPRM1 P35372 3/20 0.34
OPRK1 P41145 3/20 0.34
HTR2B P41595 3/20 0.34
KCNH2 Q12809 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707594 0.89 RIPK1 (0.51) RIPK1SLC6A4HTR2AHRH1SLC6A2
SCHEMBL713133 0.81 RIPK1 (0.41) RIPK1SLC6A4HTR2AHRH1TDP1
SCHEMBL705168 0.79 AOC3 (0.42) SLC6A4HTR2AHRH1CYP2D6CYP1A2
SCHEMBL715339 0.77 POLB (0.41) RIPK1SLC6A4HTR2AHRH1TDP1
SCHEMBL28346012 0.76 RIPK1 (0.53) RIPK1CYP3A4
SCHEMBL28346013 0.76 RIPK1 (0.53) RIPK1CYP3A4
SCHEMBL703009 0.76 POLB (0.41) SLC6A4OPRM1OPRK1KDM4ESIGMAR1
SCHEMBL10031301 0.75 SLC6A2 (0.64) RIPK1SLC6A4HTR2AHRH1CYP2D6
SCHEMBL702729 0.74 SLC7A5 (0.42) SLC6A4HTR2AOPRM1OPRK1SIGMAR1
SCHEMBL707195 0.74 SLC7A5 (0.39) RIPK1SLC6A4HTR2AHRH1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed