SCHEMBL707772

SCHEMBL707772

CCC([SiH2]OC(C)=O)(c1ccccc1)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.38
ALDH1A1 P00352 1/20 0.38
CYP2C19 P33261 1/20 0.38
HIF1A Q16665 1/20 0.38
CHRM2 P08172 2/20 0.37
CHRM1 P11229 2/20 0.37
CHRM3 P20309 2/20 0.37
KCNH2 Q12809 2/20 0.37
OPRM1 P35372 3/20 0.36
GRIN2D O15399 2/20 0.36
GRIN1 Q05586 2/20 0.36
GRIN2A Q12879 2/20 0.36
GRIN2B Q13224 2/20 0.36
GRIN2C Q14957 2/20 0.36
DRD3 P35462 2/20 0.36
KIF11 P52732 1/20 0.36
CACNA1F O60840 1/20 0.36
ABCB1 P08183 1/20 0.36
CYP2B6 P20813 1/20 0.36
DRD4 P21917 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705574 0.77 MAPT (0.47) KCNN4ALDH1A1CYP2C19HIF1AKIF11
SCHEMBL713410 0.74 MAPK1 (0.40) KCNN4ALDH1A1CYP2C19HIF1AKMT2A
SCHEMBL703035 0.71 KCNN4 (0.34) KCNN4ALDH1A1CYP2C19KCNH2OPRM1
SCHEMBL4620006 0.71 KCNN4 (0.40) KCNN4ALDH1A1CYP2C19HIF1AOPRM1
Biphenyl SCHEMBL27640086 0.69 MAPT (0.44) ALDH1A1CYP2C19MAPT
SCHEMBL10234508 0.69 CYP2C19 (0.46) KCNN4ALDH1A1CYP2C19HIF1ACHRM2
SCHEMBL5571854 0.68 CYP2C19 (0.48) KCNN4ALDH1A1CYP2C19HIF1ACHRM2
SCHEMBL18408916 0.68 CYP2C19 (0.48) KCNN4ALDH1A1CYP2C19HIF1ACHRM2
SCHEMBL704484 0.67 KCNN4 (0.40) KCNN4ALDH1A1CYP2C19HIF1AKIF11
SCHEMBL705992 0.67 CYP2C19 (0.42) KCNN4ALDH1A1CYP2C19HIF1AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed