SCHEMBL703501

SCHEMBL703501

CCO[Si](c1ccccc1)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.32
MAPK1 P28482 1/20 0.32
KDM4E B2RXH2 1/20 0.31
TP53 P04637 1/20 0.31
RIPK1 Q13546 1/20 0.31
TAAR1 Q96RJ0 2/20 0.30
ALDH1A1 P00352 1/20 0.30
ALOX15 P16050 1/20 0.30
SLC6A2 P23975 1/20 0.30
HPGD P15428 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
PIN1 Q13526 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705890 0.89
SCHEMBL707647 0.84 LMNA (0.35) LTA4HMAPK1KDM4EALDH1A1HPGD
SCHEMBL10627099 0.82 MAPK1 (0.38) MAPK1TAAR1ALDH1A1ALOX15
SCHEMBL703820 0.81 LTA4H (0.42) LTA4HKDM4EALDH1A1HPGDSMN1; SMN2
SCHEMBL708399 0.79 SMYD2 (0.36) LTA4HMAPK1TP53TAAR1ALDH1A1
SCHEMBL708273 0.79 LTA4H (0.32) LTA4HMAPK1TP53TAAR1ALDH1A1
SCHEMBL1314672 0.78 ESR1 (0.32) LTA4HMAPK1KDM4ETP53ALDH1A1
Methylamine SCHEMBL29052258 0.76 SMYD2 (0.35) LTA4HMAPK1TAAR1ALDH1A1SLC6A2
SCHEMBL1040232 0.76 LMNA (0.46) MAPK1KDM4ERIPK1ALDH1A1
SCHEMBL702695 0.76 MAPK1 (0.36) LTA4HMAPK1KDM4EALDH1A1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed