SCHEMBL708401

SCHEMBL708401

CC(O[SiH](c1ccccc1)c1ccccc1)C(C)(C)C

nearest known ligand 0.32

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 1/20 0.32
MAPK1 P28482 1/20 0.32
RIPK1 Q13546 1/20 0.31
ALDH1A1 P00352 1/20 0.30
ALOX15 P16050 1/20 0.30
ATM Q13315 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3888063 0.78 ALDH1A1 (0.35) TRPA1ALDH1A1L3MBTL1
SCHEMBL7848050 0.78 MAPK1 (0.31) MAPK1
SCHEMBL4766094 0.77 TRPA1 (0.36) TRPA1RIPK1ALDH1A1ALOX15ATM
SCHEMBL7341479 0.77 TRPA1 (0.36) TRPA1RIPK1ALDH1A1ALOX15ATM
SCHEMBL5724237 0.76 MAPK1 (0.31) MAPK1
SCHEMBL706845 0.75 KCNH2 (0.33) TRPA1ALDH1A1
SCHEMBL23701039 0.74 TRPA1 (0.32) TRPA1
SCHEMBL23701156 0.74 TSHR (0.33)
SCHEMBL13528585 0.73 THRB (0.37) TRPA1ALDH1A1
SCHEMBL16147775 0.73 TRPA1 (0.30) TRPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed